AON1620 Datasheet PDF | Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AON1620

The AON1620 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.

Part No.	AON1620
Datasheet	AON1620 Download
Manufacturer	Alpha & Omega Semiconductors
Description	12V N-Channel MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) Typical ESD protection 12V 4A < 22mΩ < 27mΩ < 36mΩ HBM Class 2 DFN 1.6x1.6A Top View Bottom View S D S G Pin 1 D G Pin 1

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG S Maximum 12 ±8 4 3 16 1.8 1.15 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 56 88 Max 70 110 Units V V A W °C Units °C/W °C/W Rev 0 : Sep. 2012 Page 1 of 5 AON1620

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 12 V IDSS Zero Gate Voltage D...