Alpha & Omega Semiconductors AON2406
The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | AON2406 |
|---|---|
| Datasheet | AON2406 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) RDS(ON) (at VGS=1.5V) 20V 8A < 12.5mW < 15mW < 19mW < 24mW DFN 2x2B Top View Bottom View D D S D S Pin 1 D D G G Pin 1ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 8 6 32 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 37 66 Max 45 80 D S Units V V A W °C Units °C/W °C/W Rev 1.0 : August 2023 Page 1 of 5 AON2406ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=...
