Alpha & Omega Semiconductors AON4420L
The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. The value in any given application depends on the user's specific board design.| Part No. | AON4420L |
|---|---|
| Datasheet | AON4420L Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDS (V) = 30V ID = 10A RDS(ON) < 19mW RDS(ON) < 25mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free Top View DFN 3x2 Bottom View Pin 1 D D D D D D G S GABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Pulsed Drain Current C IDM Continuous Drain TA=25°C Current A TA=70°C ID TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 50 10 8 1.6 1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead B Symbol Typ t ≤ 10s Steady-State RqJA 34 66 Steady-State RqJL 20 Max 40 80 25 D S Units V V A W °C Units °C/W °C/W °C/W Rev.1.0: January 2024 Page 1 of 5 AON4420LELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage...
