GENERAL DESCRIPTION
Product Summary VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 60V 85A < 4.7mΩ < 6.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 ABSOLUTE MAXIMUM RATINGS
TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 60 ±20 85 59 200 15 12 65 211 83 33 2.3 1.5 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH C TC=25° C Power Dissipation Power Dissipation B TC=100° C TA=25° C TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: July 2011 Page...
Alpha & Omega Semiconductors
