Alpha & Omega Semiconductors AON6324
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C.| Part No. | AON6324 |
|---|---|
| Datasheet | AON6324 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power MOSFET technology● Low RDS(ON)
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 85A < 2.8mΩ < 3.5mΩ
APPLICATIONS
● DC/DC Converters in Computing● Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 1 2 3 4 PIN1 8 7 6 5 G S Orderable Part Number AON6324 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum...
