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AON6368 Datasheet PDF

Alpha & Omega Semiconductors AON6368

The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C.
Part No. AON6368
Datasheet AON6368 Download
Manufacturer
Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
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AON6368 datasheet page 1 preview

GENERAL DESCRIPTION

● Trench Power αMOS Technology
● Low RDS(ON)
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 52A < 6.1mΩ < 9.5mΩ

APPLICATIONS

● DC/DC Converters in Computing
● Isolated DC/DC Converters in Telecom and Industrial
● See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AON6368 1 2 3 4 PIN1 Package Type DFN 5x6 8 7 6 5 G Form Tape & Reel S Minimum Order Quantity 3000

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG...
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