Alpha & Omega Semiconductors AON6510
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C.| Part No. | AON6510 |
|---|---|
| Datasheet | AON6510 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power AlphaMOS (αMOS LV) technology● Low RDS(ON)
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 32A < 4.4mΩ < 5.9mΩ Application
● DC/DC Converters in Computing, Servers, and POL
● Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AON6510 PIN1 Package Type DFN 5x6 1 8 2 7 3 6 4 5 Form Tape & Reel G S Minimum Order Quantity 3000
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temper...
