Alpha & Omega Semiconductors AON6554
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C.| Part No. | AON6554 |
|---|---|
| Datasheet | AON6554 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Latest Trench Power AlphaMOS (αMOS LV) technology● Very Low RDS(ON) at 4.5V VGS
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application
● DC/DC Converters in Computing, Servers, and POL
● Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 85A < 2.9mΩ < 3.7mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 D G S
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 85 66 260 36 28 50 63 36 70 28 5.6 3.6 -55 t...
