Alpha & Omega Semiconductors AON6992
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C.GENERAL DESCRIPTION
● Trench Power αMOS Technology● Low RDS(ON)
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 85A < 2mΩ < 2.5mΩ
APPLICATIONS
● DC/DC Converters in Computing● Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6D Bottom View G2 S2 S2 S2 PHASE (S1/D2) PIN1 D1 D1 G1 D1 D1 PIN1 Top View PHASE S1/D2 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Orderable Part Number AON6992 Package Type DFN 5x6D Form Tape & Reel Bottom View D1 S1/D2 Minimum Order Quantity 3000
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 10µs VSPI...