GENERAL DESCRIPTION
FEATURES
VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 12.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation B Maximum 30 ±12 20 16 80 10 9 35 14 3.1 2 -55 to 150 Units V V TC=25°C TC=100°C C ID IDM IDSM PD PDSM TJ, TSTG A TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C A W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3 Max 40 75 3.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON7400 ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, V...