Alpha & Omega Semiconductors AON7506
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C.GENERAL DESCRIPTION
● Latest Trench Power MOSFET technology● Very Low RDS(ON) at 4.5V VGS
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application
● DC/DC Converters in Computing, Servers, and POL
● Isolated DC/DC Converters in Telecom and Industrial
● See Note I 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain CurrentG Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.05mH C VDS Spike 100ns IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 9.4 48 12 10.5 20 10 36 20.5 8 3.1 2 -55 to 150 Th...