Alpha & Omega Semiconductors AONR36326C
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C.| Part No. | AONR36326C |
|---|---|
| Datasheet | AONR36326C Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power MOSFET technology● Very Low RDS(ON) at 4.5V VGS
● Low Gate Charge
● High Current Capability
● RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 12A < 9.8mΩ < 15.9mΩ
APPLICATIONS
● DC/DC Converters in Computing, Servers, and POL● Isolated DC/DC Converters in Telecom and Industrial
● See Note I 100% UIS Tested 100% Rg Tested DFN 3x3 EP D Top View Bottom View Top View Pin 1 S1 S2 Pin 1 S 3 G4 8D 7D 6D 5D G S Orderable Part Number AONR36326C Package Type DFN 3X3 EP Form Tape & Reel Minimum Order Quantity 5000
ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain CurrentG TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junctio...
