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AOU403 Datasheet PDF

Alpha & Omega Semiconductors AOU403

The AOU403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU403 is Pb-free (meets ROHS & Sony 259 specifications).
Part No. AOU403
Datasheet AOU403 Download
Manufacturer
Alpha & Omega Semiconductors
Description P-Channel MOSFET
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AOU403 datasheet page 1 preview

GENERAL DESCRIPTION

AOU403L is a Green Product ordering option. AOU403 and AOU403L are electrically identical. TO-251 D

FEATURES

VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mΩ (VGS = -10V) RDS(ON) < 150mΩ (VGS = -4.5V) Top View Drain Connected to Tab G S G D S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 ±20 -12 -10 -30 -12 23 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 105 2.5 Max 125 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU403

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-25...
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