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AOY2N60 Datasheet PDF

Alpha & Omega Semiconductors AOY2N60

The value of R qJA is measured with the device in a still air environment with T A =25°C. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
Part No. AOY2N60
Datasheet AOY2N60 Download
Manufacturer
Alpha & Omega Semiconductors
Description 600V 2A N-Channel MOSFET
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AOY2N60 datasheet page 1 preview

GENERAL DESCRIPTION

● Advanced High Voltage MOSFET technology
● Low RDS(ON)
● Low Ciss and Crss
● High Current Capability
● RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.7W

APPLICATIONS

● General Lighting for LED and CCFL
● AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO251B D Top View Bottom View D S D G AOY2N60 Orderable Part Number AOY2N60 G D S Package Type TO-251B Form Tube G S Minimum Order Quantity 3500

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case...
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