D9N40 Datasheet PDF | Alpha & Omega Semiconductors

Alpha & Omega Semiconductors D9N40

The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Part No.	D9N40
Datasheet	D9N40 Download
Manufacturer	Alpha & Omega Semiconductors
Description	8A N-Channel MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

Product Summary VDS ID (at VGS=10V) 500V@150℃ 8A <0.8Ω RDS(ON) (at VGS=10V) TO252 DPAK Top View t e n G D r e .n a D S G S ww

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentB TC=25°C 8 TC=100°C ID F w C ua Maximum 400 ±30 5 22 3.2 150 300 5 125 1 -50 to 150 300 Typical 45 0.7 ce. G S Bottom View 8 c T 100% UIS Tested! 100% Rg Tested! D om Units V V A A mJ mJ V/ns W W/ oC °C °C Maximum 55 0.5 1 Units °C/W °C/W °C/W Page 1 of 6 PD Pulsed Drain Current Avalanche Current C C IDM IAR Repetitive avalanche energy C EAR EAS dv/dt PD TJ, TSTG TL Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-Case D,F H A...