TF9N70 Datasheet PDF

GENERAL DESCRIPTION

For Halogen Free add "L" suffix to part number: AOT9N70L & AOTF9N70L Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 800V@150℃ 9A < 1.2Ω 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D G S G AOTF9N70 S S G AOT9N70 D D C unless otherwise noted

ABSOLUTE MAXIMUM RATINGS

TA=25° AOT9N70 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A AOTF9N70 700 ±30 9* 5.8* 33 3.2 77 154 5 50 0.4 -55 to 150 300 AOTF9N70L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT9N70 65 0.5 0.53 236 1.8 9 5.8 9* 5.8* A A mJ mJ V/ns W W/ oC °...