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FTP02N60 - 600V N-Channel MOSFET

Features

  • ¾ Low ON Resistance ¾ Low Gate Charge (typical 8.9nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTP02N60/FTA02N60 BVDSS 600V RDS(ON) (Max. ) 4.4Ω ID 2.2A.

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Datasheet Details

Part number FTP02N60
Manufacturer ark
File Size 444.32 KB
Description 600V N-Channel MOSFET
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Full PDF Text Transcription

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600V N-Channel MOSFET General Features ¾ Low ON Resistance ¾ Low Gate Charge (typical 8.9nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTP02N60/FTA02N60 BVDSS 600V RDS(ON) (Max.) 4.4Ω ID 2.2A Applications ¾ High Efficiency SMPS ¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power Ordering Information Part Number Package FTP02N60 TO-220 FTA02N60 TO-220F Marking FTP02N60 FTA02N60 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL Parameter Drain-to-Source Voltage[1] Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=30mH, ID=2.
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