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60V N-Channel MOSFET
General Features
¾ Low ON Resistance ¾ Low Gate Charge (typical 20nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ Optimized Bvdss Capability ¾ RoHS Compliant ¾ Halogen-free available
BVDSS 60V
FTP18N06N
RDS(ON) (Max.) 18m
ID 68A
Applications
¾ Power Supply ¾ DC-DC Converters
Ordering Information
Part Number Package
FTP18N06N
TO-220
Marking
FTP18N06N
Absolute Maximum Ratings
specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation PD Derating Factor above 25ć
TC=25ć unless otherwise
FTP18N06N 60 68 272 115 0.77
Unit V
A
W W/ć
VGS EAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy L=11.9 ID=5.5A Peak Diode Recovery dv/dt[3]
±20 V 360 mJ 4.
FTP18N06N Datasheet
