CP588V Datasheet | centralsemi

PROCESS Small Signal Transistor - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 54,599 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 EPITAXIAL PLANAR 14.6 x 14.6 MILS 7.1 MILS 3.9 x 3.9 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://.. PROCESS Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m...