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PROCESS
CPD30V
Dual Switching Diode
Dual, Common Cathode, High Speed Switching Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode 1 Bonding Pad Area Anode 2 Bonding Pad Area Top Side Metalization Back Side Metalization 15.4 x 15.4 MILS 7.1 MILS 5.9 x 5.9 x 8.3 MILS 5.9 x 5.9 x 8.3 MILS Al - 30,000Å Au-As - 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 46,200 PRINCIPAL DEVICE TYPE CMLD2838
BACKSIDE COMMON CATHODE
R0
R2 (6-October 2011)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
PROCESS
CPD30V
Typical Electrical Characteristics
R2 (6-October 2011)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.