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PROCESS
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
CPD69
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 42.5 x 42.5 MILS 12.5 MILS 32 x 32 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
6,200
PRINCIPAL DEVICE TYPES CMR1-02 Series CMR1-02M Series CXR1-04 CXR1-04C CZR1-04 CZR1-04C
R5 (5-April 2011)
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PROCESS
CPD69
Typical Electrical Characteristics
R5 (5-April 2011)
w w w. c e n t r a l s e m i . c o m
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CPD69 Datasheet
