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PROCESS
CPD89V
Switching Diode
High Current Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 12.8 x 12.8 MILS 7.1 MILS 5.1 x 5.1 MILS Al - 30,000Å Au-As - 10,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 103,344 PRINCIPAL DEVICE TYPES CMPD1001 SERIES CMPD5001 SERIES
R1 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
PROCESS
CPD89V
Typical Electrical Characteristics
R1 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.