DTQ3626
FEATURES
- DT-Trench Power MOSFET
- 100 % Rg and UIS Tested
- Ro HS pliant
APPLICATIONS
- Notebook PC Core
- VRM/POL
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current b Single Pulse Avalanche Current
VGS TC = 25 °C
ID TC = 100 °C
IDM IAS
Single Avalanche Energy Maximum Power Dissipationc Operating Junction and Storage Temperature Range
TC = 25 °C TC = 100 °C
EAS PD TJ, Tstg
LIMIT 60 ± 20 26 22 80 12 33.1 50 25
- 55 to 175
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient (PCB Mount) d Junction-to-Case (Drain)
SYMBOL Rth JA Rth JC
LIMIT 50 3
UNIT °C/W
Notes a. Calculated continuous current based on maximum allowablejunction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-case thermal resistance....
