DTQ6607 Description
P-Channel 60 V (D-S) MOSFET DTQ6607 .din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (mΩ )(Typ.) - 60 7.5 at VGS = - 10 V 9.5 at VGS = - 4.5 V ID (A) a Qg (Typ.) - 90 78 nC.
DTQ6607 Key Features
- DT-Trench Power MOSFET
- 15J DQG8,67HVWHG
- RoHS pliant Low RDS(ON) High Current Capability