• Part: DTSP026D012EP
  • Description: Common-Drain Dual N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Din-Tek Semiconductor
  • Size: 1.30 MB
Download DTSP026D012EP Datasheet PDF
Din-Tek Semiconductor
DTSP026D012EP
FEATURES - Advanced Trench Technology - VSSS=12V RSS(ON)=2.6mΩ(max.) @ VGS=4.5V, IS=7.3A RSS(ON)=2.9mΩ(max.) @ VGS=3.8V, IS=7.3A RSS(ON)=3.1mΩ(max.) @ VGS=3.1V, IS=7.3A RSS(ON)=4.0mΩ(max.) @ VGS=2.5V, IS=7.3A - High Dense Design - Typical ESD Protection HBM Class 2 - Excellent Gate Charge x RDS(ON) Product(FOM) - Ultra Low On-Resistance - Reliable and Rugged - Ro HS pliant APPLICATIONS ‡ Lithium-ion Secondary Battery Protection Circuits ORDERING INFORMATION Temperature Range -55°C ~ +150°C Package Pb -Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Source-Source Voltage Gate-Source Voltage Storage Temperature Range VSS VGS TSTG Operating Junction Temperature Range Package Qty. 3000 Units/ Reel LIMIT 12 ±8 - 55 to 150 - 55 to 150 UNIT V °C °C Rev. 1.0 SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Source-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero...