EV2A16A Description
Datasheet EV2A16A 256K x 16‐bit 3.3V Asynchronous Magnetoresistive RAM.
EV2A16A Key Features
- Single 3.3V Power Supply
- Industrial Temperature Range (-40°C to 110°C) and Military Temperature Range
- Symmetrical High‐speed Read and Write with Fast Access Time (35 ns)
- Flexible Data Bus Control: 8 bit or 16 bit Access
- Equal Address and Chip‐enable Access Times
- Automatic Data Protection with Low‐voltage Inhibit Circuitry to Prevent Writes on Power Loss
- All Inputs and Outputs are Transistor‐transistor Logic (TTL) patible
- Fully Static Operation
- Full Nonvolatile Operation with 20 Years Minimum Data Retention