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Datasheet
EV2A16A
256K x 16‐bit 3.3V Asynchronous Magnetoresistive RAM
Features
• Single 3.3V Power Supply • Industrial Temperature Range (–40°C to 110°C) and Military Temperature Range
(–55°C to 125°C) • Symmetrical High‐speed Read and Write with Fast Access Time (35 ns) • Flexible Data Bus Control: 8 bit or 16 bit Access • Equal Address and Chip‐enable Access Times • Automatic Data Protection with Low‐voltage Inhibit Circuitry to Prevent Writes on Power Loss • All Inputs and Outputs are Transistor‐transistor Logic (TTL) Compatible • Fully Static Operation • Full Nonvolatile Operation with 20 Years Minimum Data Retention
Introduction
The EV2A16A is a 4,194,304‐bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits.
EV2A16A Datasheet
