BUF08630 Datasheet | Texas Instruments

BUF08832 .ti. SBOS515A - OCTOBER 2010 - REVISED AUGUST 2012 Programmable Gamma-Voltage Generator and High Slew Rate V with Integrated Two-Bank Memory plus 1/2 AVDD Topology Check for Samples: BUF08630 Features - 2 10-Bit Resolution - 8-Channel P-Gamma - 1-Channel P-V - High Slew Rate V: 45 V/μs - 16x Rewritable Nonvolatile Memory - Two Independent Pin-Selectable Memory Banks - Rail-to-Rail Output: - 300 m V Min Swing-to-Rail (10 m A) - > 300 m A Max IOUT - Low Supply Current - Supply Voltage: 9 V to 20 V - Digital Supply: 2 V to 5.5 V - Two-Wire Interface: - Supports 400 k Hz and 3.4 MHz - 1/2 AVDD Capability APPLICATIONS - TFT-LCD Reference Drivers DESCRIPTION The BUF08630 offers eight programmable gamma channels and one programmable V channel. The final gamma and V values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory. The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma...