BUF16821-Q1 Datasheet | Texas Instruments

Features - 1 AEC-Q100 Qualified with: - Temperature Grade 3: - 40°C to 85°C - HBM ESD Classification 2 - CDM ESD Classification C4B - 16-Channel P-Gamma, 2-Channel P-V, 10Bit Resolution - 16x Rewritable Nonvolatile Memory - Two Independent Pin-Selectable Memory Banks - Rail-to-Rail Output: - 300-m V (Min) Swing-to-Rail (10 m A) - > 300-m A (Max) IOUT - Supply Voltage: 9 V to 20 V - Digital Supply: 2 V to 5.5 V - I2C™ Interface: Supports 400 k Hz and 2.7 MHz 2 Application TFT-LCD Reference Drivers Functional Block Diagram Digital Analog BKSEL (2.0 V to 5.5 V) (9 V to 20 V) OUT1 3 Description The BUF16821-Q1 offers 16 programmable gamma channels and two programmable V channels. The final gamma and V values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the device supports up to 16 write operations to the on-chip memory. The device has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves. All gamma and V channels offer a rail-to-rail output that typically swings to within 150 m V of either supply rail with a 10-m A load. All channels are programmed using an I2C interface that supports standard operations up to 400 k Hz and high-speed data transfers up to 2.7 MHz. The device is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20 V. The device is offered in an HTSSOP-28 Power PAD™ package, and is specified from - 40°C to +85°C. PART NUMBER BUF16821-Q1 Device Information(1) PACKAGE BODY SIZE (NOM) HTSSOP (28) 9.70 mm × 4.40 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. OUT2 16x Nonvolatile Memory BANK0 16x Nonvolatile Memory BANK1 ¼ DAC...