Download BUF16821-Q1 Datasheet PDF
BUF16821-Q1 page 2
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BUF16821-Q1 Description

The BUF16821-Q1 offers 16 programmable gamma channels and two programmable V channels. The final gamma and V values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the device supports up to 16 write operations to the on-chip memory.

BUF16821-Q1 Key Features

  • Temperature Grade 3: -40°C to 85°C
  • HBM ESD Classification 2
  • CDM ESD Classification C4B
  • 16-Channel P-Gamma, 2-Channel P-V, 10Bit Resolution
  • 16x Rewritable Nonvolatile Memory
  • Two Independent Pin-Selectable Memory Banks
  • Rail-to-Rail Output
  • 300-mV (Min) Swing-to-Rail (10 mA)
  • > 300-mA (Max) IOUT
  • Supply Voltage: 9 V to 20 V