Datasheet Details
| Part number | CSD16323Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 451.09 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16323Q3-etcTI.pdf |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & munity CSD16323Q3 SLPS224C – AUGUST 2009 – REVISED NOVEMBER 2016 CSD16323Q3 N-Channel NexFET™ Power MOSFET.
| Part number | CSD16323Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 451.09 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16323Q3-etcTI.pdf |
|
|
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This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance Vth Threshold Voltage TYPICAL VALUE 25 6.2 1.1 VGS = 3 V 5.4 VGS = 4.5 V 4.4 VGS = 8 V 3.8 1.1 UNIT V nC nC mΩ V DEVICE CSD16323Q3 CSD16323Q3T Device Information(1) MEDIA QTY PACKAGE 13-Inch Reel 7-Inch Reel 2500 SON 3.30-mm × 3.30-mm 250 Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) VALUE 25 +10 / –8 60 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 105 A Continuous Drain Current(1) 20 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 240 A 2.8 W 74 TJ, Operating Junction, Tstg Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω 125 mJ (1) RθJA = 45°C/W on 1-in2, 2-oz Cu pad on 0.06-in thick FR4 PCB.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Ciclon | CSD16323Q3 | Power MOSFET | Ciclon |
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