CSD16323Q3 Datasheet | Texas Instruments

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance Vth Threshold Voltage TYPICAL VALUE 25 6.2 1.1 VGS = 3 V 5.4 VGS = 4.5 V 4.4 VGS = 8 V 3.8 1.1 UNIT V nC nC mΩ V DEVICE CSD16323Q3 CSD16323Q3T Device Information(1) MEDIA QTY PACKAGE 13-Inch Reel 7-Inch Reel 2500 SON 3.30-mm × 3.30-mm 250 Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.