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CSD16406Q3 - N-Channel Power MOSFET

General Description

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16406Q3 SLPS202B – AUGUST 2009 – REVISED DECEMBER 2015 CSD16406Q3 N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Control or Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source OnResistance Vth Threshold Voltage TYPICAL VALUE 25 5.8 1.5 VGS = 4.5 V 5.9 VGS = 10 V 4.2 1.