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CSD16407Q5 - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

  • 1.
  • 2 Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16407Q5 www.ti.com SLPS203A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16407Q5 FEATURES 1 •2 Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain-to0source voltage Qg Gate charge, total (4.5 V) Qgd Gate charge, gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage 25 V 13.3 nC 3.5 nC VGS = 4.5 V VGS = 10 V 1.