Click to expand full text
CSD16407Q5
www.ti.com
SLPS203A – AUGUST 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16407Q5
FEATURES
1
•2 Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0094-01
PRODUCT SUMMARY
VDS
Drain-to0source voltage
Qg
Gate charge, total (4.5 V)
Qgd
Gate charge, gate-to-drain
RDS(on) Drain-to-source on-resistance
VGS(th) Threshold voltage
25
V
13.3
nC
3.5
nC
VGS = 4.5 V VGS = 10 V
1.
CSD16407Q5 Datasheet
