CSD16409Q3
CSD16409Q3 is N-Channel Power MOSFET manufactured by Texas Instruments.
FEATURES
- 2 Ultra Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele and puting Systems
- Optimized for Control FET Applications
DESCRIPTION
The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0095-01
VDS Qg Qgd
RDS(on)
Vth
PRODUCT SUMMARY
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Drain to Source On Resistance Threshold Voltage
VGS = 4.5V VGS = 10V
V n C n C 9.5 mΩ 6.2 mΩ V
ORDERING INFORMATION
Device...
