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CSD16414Q5 Datasheet N-Channel Power MOSFET

Manufacturer: Texas Instruments

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 16.6 nC Qgd Gate Charge Gate to Drain 4.4 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 2.1 mΩ 1.5 mΩ VGS(th) Threshold Voltage 1.6 V ORDERING INFORMATION Device Package Media Qty CSD16414Q5 SON 5 × 6 Plastic 13-inch Package reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 100A, L = 0.1mH, RG = 25Ω VALUE 25 +16 / –12 100 34 213 3.2 UNIT V V A A A W –55 to 150 °C 500 mJ (1) RqJA = 39°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2%" RDS(on) − On-State Resistance − mΩ VG − Gate Voltage − V RDS(ON) vs VGS 6 ID = 30A 5 4 TC = 125°C 3 2 1 TC = 25°C 0 0 2 4 6 8 10 12 VGS − Gate to Source Voltage − V G006 12 ID = 30A 10 VDS = 12.5V Gate Charge 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments

Overview

CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET Check for Samples:.

Key Features

  • 1.
  • 2 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5mm × 6mm Plastic Package.