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CSD16414Q5
www.ti.com
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16414Q5
FEATURES
1
•2 Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5mm × 6mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0094-01
PRODUCT SUMMARY
VDS
Drain to Source Voltage
25
V
Qg
Gate Charge Total (4.5V)
16.6
nC
Qgd
Gate Charge Gate to Drain
4.