CSD16414Q5
CSD16414Q5 is N-Channel Power MOSFET manufactured by Texas Instruments.
FEATURES
- 2 Ultra Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 5mm × 6mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele and puting Systems
- Optimized for Synchronous FET Applications
DESCRIPTION
The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0094-01
PRODUCT SUMMARY
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
16.6 n C
Qgd
Gate Charge Gate to Drain
4.4 n C
RDS(on) Drain to Source On Resistance
VGS = 4.5V VGS = 10V
2.1 mΩ 1.5 mΩ
VGS(th) Threshold Voltage
ORDERING...
