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CSD16556Q5B Datasheet 25V N-Channel Power MOSFET

Manufacturer: Texas Instruments

General Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 36 12 VGS = 4.5 V 1.2 VGS = 10 V 0.9 1.4 UNIT V nC nC mΩ mΩ V Device CSD16556Q5B CSD16556Q5BT .

Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16556Q5B SLPS432C – NOVEMBER 2012 – REVISED JANUARY 2015 CSD16556Q5B 25-V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Extremely Low Resistance.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.