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CSD17309Q3 Datasheet N-Channel MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17309Q3 SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET.

General Description

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 7.5 1.7 VGS = 3 V VGS = 4.5 V VGS = 8 V 1.2 6.3 4.9 4.2 UNIT V nC nC mΩ V Device CSD17309Q3 CSD17309Q3T .

Ordering Information(1) Media Qty Package Ship 13-Inch Reel 2500 SON 3.3 × 3.3 mm Tape and 7-Inch Reel 250 Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Optimized for 5 V Gate Drive.
  • Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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