Click to expand full text
CSD17510Q5A
www.ti.com
SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17510Q5A
FEATURES
1
•2 Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
• Optimized for Control and Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3 G4
D
6D 5D
VDS Qg Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
6.4
Gate Charge Gate to Drain
1.