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CSD17510Q5A - N-Channel MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

  • 1.
  • 2 Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17510Q5A FEATURES 1 •2 Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Control and Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 6.4 Gate Charge Gate to Drain 1.