Datasheet4U Logo Datasheet4U.com

CSD17581Q5A - N-Channel MOSFET

General Description

This 30-V, 2.9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

.

.

Key Features

  • 1 Low Qg and Qgd.
  • Low RDS(on).
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC
CSD10120 ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD17581Q3A N-Channel MOSFET
CSD17585F5 N-Channel MOSFET
CSD17501Q5A N-Channel MOSFET
CSD17505Q5A N-Channel MOSFET
CSD17506Q5A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17581Q5A SLPS630 – SEPTEMBER 2016 CSD17581Q5A 30-V N-Channel NexFET™ Power MOSFETs 1 Features •1 Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Control FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 20 4 VGS = 4.5 V VGS = 10 V 1.3 3.5 2.9 UNIT V nC nC mΩ mΩ V .