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CSD18501Q5A - Power MOSFETs

General Description

This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18501Q5A SLPS319C – JUNE 2012 – REVISED JANUARY 2015 CSD18501Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5 V 3.3 VGS = 10 V 2.5 1.