Datasheet Details
| Part number | CSD18502Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.01 MB |
| Description | Power MOSFETs |
| Datasheet | CSD18502Q5B-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLPS320B – NOVEMBER 2012 – REVISED MAY 2017 CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET.
| Part number | CSD18502Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.01 MB |
| Description | Power MOSFETs |
| Datasheet | CSD18502Q5B-etcTI.pdf |
|
|
|
This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain to source voltage VGS Gate to source voltage Continuous drain current (package limited) VALUE 40 ±20 100 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 204 A Continuous drain current(1) 26 IDM Pulsed drain current(2) Power dissipation(1) PD Power dissipation, TC = 25°C 400 A 3.2 W 156 TJ Operating junction temperature –55 to 150 °C Tstg Storage temperature –55 to 150 °C EAS Avalanche energy, single pulse ID = 88 A, L = 0.1 mH, RG = 25 Ω 387 mJ (1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz.
Cu pad on a 0.06 inch thick FR4 PCB.
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