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CSD18502Q5B - Power MOSFETs

General Description

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen-Free.
  • SON 5 mm × 6 mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLPS320B – NOVEMBER 2012 – REVISED MAY 2017 CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb-Free Terminal Plating • RoHS Compliant • Halogen-Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control Product Summary TA = 25°C VDS Drain to source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage TYPICAL VALUE 40 25 8.4 VGS = 4.5 V 2.5 VGS = 10 V 1.8 1.