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CSD19506KTT Datasheet 80V N-Channel NexFET Power MOSFET

Manufacturer: Texas Instruments

General Description

This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE Drain (Pin 2) Gate (Pin 1) .

Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 120 20 VGS = 6 V 2.2 VGS = 10 V 2.0 2.5 UNIT V nC nC mΩ mΩ V DEVICE CSD19506KTT CSD19506KTTT Ordering Information(1) QTY MEDIA PACKAGE 500 50 13-Inch Reel D2PAK Plastic Package SHIP Tape & Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19506KTT SLPS586 – MARCH 2016 CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • D2PAK Plastic Package 2.