CSD19534Q5A
Features
- 1 Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 5 mm × 6 mm Plastic Package
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
VGS = 6 V VGS = 10 V
14.1 12.6
UNIT V n C n C mΩ mΩ V
2 Applications
- Primary Side Tele
- Motor Control
3 Description
This 100 V, 12.6 mΩ, SON 5 mm x 6mm Nex FET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
5D
P0093-01
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Device CSD19534Q5A CSD19534Q5AT
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