CSD19538Q3A
Features
- Ultra-low Qg and Qgd
- Low-thermal resistance
- Avalanche rated
- Lead free
- Ro HS pliant
- Halogen free
- SON 3.3mm × 3.3mm plastic package
2 Applications
- Power over Ethernet (Po E)
- Power sourcing equipment (PSE)
- Motor control
3 Description
This 100V, 49mΩ, SON 3.3mm × 3.3mm Nex FET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in Po E applications.
S1
8D
S2
7D
S3 G4
Top View
6D
5D
P0093-01
200 180 160 140 120 100
80 60 40 20
0 0
TC = 25q C, ID = 5 A TC = 125q C, ID = 5 A
2 4 6 8 10 12 14 16 18 20
- Gate-to-Source Voltage (V)
D007
RDS(on) versus VGS
Product Summary
TA = 25°C
TYPICAL VALUE
VDS Drain-to-Source Voltage
Qg
Gate Charge Total...
