CSD19538Q3A Description
This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications. (2) The package size (length × width) is a nominal value and includes pins, where applicable. (2) Maximum RθJC = 5.5°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
CSD19538Q3A Key Features
- Ultra-low Qg and Qgd
- Low-thermal resistance
- Avalanche rated
- Lead free
- RoHS pliant
- Halogen free
- SON 3.3mm × 3.3mm plastic package