Datasheet Details
| Part number | CSD19538Q3A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 847.23 KB |
| Description | 100V N-Channel Power MOSFET |
| Download | CSD19538Q3A Download (PDF) |
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Overview: TI Information - Selective Disclosure CSD19538Q3A SLPS583B – MAY 2016 – REVISED OCTOBER 2025 CSD19538Q3A 100V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V).
| Part number | CSD19538Q3A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 847.23 KB |
| Description | 100V N-Channel Power MOSFET |
| Download | CSD19538Q3A Download (PDF) |
|
|
|
This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
S1 8D S2 7D S3 G4 D Top View 6D 5D P0093-01 200 180 160 140 120 100 80 60 40 20 0 0 TC = 25qC, ID = 5 A TC = 125qC, ID = 5 A 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 RDS(on) versus VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 100 Qg Gate Charge Total (10V) 4.3 Qgd Gate Charge Gate to Drain 0.8 RDS(on) Drain-to-Source On Resistance VGS = 6V 58 VGS = 10V 49 VGS(th) Threshold Voltage 3.2 UNIT V nC nC mΩ V PART NUMBER CSD19538Q3A CSD19538Q3AT Package Information MEDIA QTY PACKAGE(1) SHIP 13-in reel 7-in reel 3000 250 SON 3.30mm × 3.30mm(2) Plastic package Tape and reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
| Part Number | Description |
|---|---|
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