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CSD87312Q3E - Dual 30-V N-Channel Power MOSFET

Datasheet Summary

Description

protection.

multi-cell battery charging applications.

Features

  • 1.
  • Common Source Conn ection.
  • UltrZaZZLWLoFRwP Drain to Drain On-Resistance.
  • Space Saving SON 3.3 x 3.3mm Plastic Package.
  • Optimized for 5V Gate Drive.
  • Lowx Thermal Resistance.
  • Avaxlanche Rated.
  • PbxxFree Terminal Plating.
  • RoxHS Compliant.
  • Halxxogen Free APPLxxIC+.

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Datasheet preview – CSD87312Q3E

Datasheet Details

Part number CSD87312Q3E
Manufacturer Texas Instruments
File Size 374.13 KB
Description Dual 30-V N-Channel Power MOSFET
Datasheet download datasheet CSD87312Q3E Datasheet
Additional preview pages of the CSD87312Q3E datasheet.

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Full PDF Text Transcription

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CSD87312Q3E www.ti.com SLPS333 – NOVEMBER 2012 Dual 30-V N-Channel NexFET™ Power MOSFETs FEATURES 1 • Common Source Conn ection • UltrZaZZLWLoFRwP Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3mm Plastic Package • Optimized for 5V Gate Drive • Lowx Thermal Resistance • Avaxlanche Rated • PbxxFree Terminal Plating • RoxHS Compliant • Halxxogen Free APPLxxIC+ADOTRJIHOQ)NUHSH • Adaptor/USB Input Protection for Notebook PCxs and Tablets DESCRIPTION The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
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