DRV411 Description
The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor modules. The DRV411 provides precision excitation circuitry for the Hall-element effectively eliminating the offset and offset-drift of the Hall element. This device also provides a 250-mA H-bridge for driving the sensor pensation coil as well a precision differential amplifier to generate the output signal.
DRV411 Key Features
- 23 Optimized for Symmetric Hall-Elements (for example, AKM HW-322, HW-302, or similar)
- Spinning Current Hall Sensor Excitation
- Elimination of Hall Sensor Offset and Drift
- Elimination of 1/f Noise
- Extended Current Measurement Range
- H-Bridge Drive Capability: 250 mA
- Precision Difference Amplifier
- Offset and Drift: 100 µV (max), 2 µV/°C (max)
- System Bandwidth: 200 kHz
- Precision Reference