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DRV5012 - Ultra-Low-Power Digital-Latch Hall-Effect Sensor

Datasheet Summary

Description

The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate.

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage.

Features

  • 1 Industry-Leading Low-Power Consumption.
  • Pin-Selectable Sampling Rate:.
  • SEL = Low: 20 Hz Using 1.3 µA (1.8 V).
  • SEL = High: 2.5 kHz Using 142 µA (1.8 V).
  • 1.65- to 5.5-V Operating VCC Range.
  • High Magnetic Sensitivity: ±2 mT (Typical).
  • Robust Hysteresis: 4 mT (Typical).
  • Push-Pull CMOS Output.
  • Small and Thin X2SON Package.
  • 40°C to +85°C Operating Temperature Range 2.

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Datasheet Details

Part number DRV5012
Manufacturer Texas Instruments
File Size 1.03 MB
Description Ultra-Low-Power Digital-Latch Hall-Effect Sensor
Datasheet download datasheet DRV5012 Datasheet
Additional preview pages of the DRV5012 datasheet.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community DRV5012 SLVSDD5 – AUGUST 2017 DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor 1 Features •1 Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 µA (1.8 V) – SEL = High: 2.5 kHz Using 142 µA (1.8 V) • 1.65- to 5.
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