DRV5012
DRV5012 is Ultra-Low-Power Digital-Latch Hall-Effect Sensor manufactured by Texas Instruments.
Features
- 1 Industry-Leading Low-Power Consumption
- Pin-Selectable Sampling Rate:
- SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
- SEL = High: 2.5 k Hz Using 142 µA (1.8 V)
- 1.65- to 5.5-V Operating VCC Range
- High Magnetic Sensitivity: ±2 m T (Typical)
- Robust Hysteresis: 4 m T (Typical)
- Push-Pull CMOS Output
- Small and Thin X2SON Package
- - 40°C to +85°C Operating Temperature Range
2 Applications
- Brushless DC Motor Sensors
- Incremental Rotary Encoding:
- Motor Speed
- Mechanical Travel
- Fluid Measurement
- Knob Turning
- Wheel Speed
- Portable Medical Devices
- E-Locks, E-Bikes, Motorized Blinds
- Flow Meters
- Contactless Activation
3 Description
The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate.
When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.
Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 k Hz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.
The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
X2SON (4)
1.10 mm × 1.40 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Typical Schematic
VCC OUT
SEL GND
Controller GPIO...
