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DRV5012 Datasheet

Manufacturer: Texas Instruments
DRV5012 datasheet preview

Datasheet Details

Part number DRV5012
Datasheet DRV5012-etcTI.pdf
File Size 1.03 MB
Manufacturer Texas Instruments
Description Ultra-Low-Power Digital-Latch Hall-Effect Sensor
DRV5012 page 2 DRV5012 page 3

DRV5012 Overview

The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate. When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage.

DRV5012 Key Features

  • 1 Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate
  • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
  • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • 40°C to +85°C Operating Temperature Range
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DRV5012 Distributor

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