INA129-EP Datasheet | Texas Instruments

Features - 1 Low Offset Voltage - Low Input Bias Current - High CMR: 95 d B (Typical) - Inputs Protected to ±40 V - Wide Supply Range: ±2.25 V to ±18 V - Low Quiescent Current: 2 m A (Typical) 2 Applications - Bridge Amplifier - Thermocouple Amplifier - RTD Sensor Amplifier - Medical Instrumentation - Data Acquisition - Supports Extreme Temperature Applications: - Controlled Baseline - One Assembly and Test Site - One Fabrication Site - Available in Military (- 55°C to +125°C) Temperature Range (1) - Extended Product Life Cycle - Extended Product-Change Notification - Product Traceability (1) Custom temperature ranges available 3 Description The INA129-EP device is a low power, generalpurpose instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design and small size make the device ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 k Hz at G = 100). A single external resistor sets any gain from 1 to 10,000. The INA129-EP provides an industrystandard gain equation; the INA129-EP gain equation is patible with the AD620. The INA129-EP device is laser trimmed for very low offset voltage, drift, and high mon-mode rejection (113 d B at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 μA- ideal for battery operated systems. Internal input protection can withstand up to ±40 V without damage. The INA129-EP is available in a 8-Pin SOIC surfacemount package specified for the - 55°C to 125°C temperature range. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) SOIC (8) 4.90 mm × 3.91 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. VI-N 2 Over-Voltage Protection RG...