JFE150 Overview
Description
The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments' modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies.
Key Features
- Ultra-low noise: – Voltage noise
- 0.8 nV/√Hz at 1 kHz, IDS = 5 mA
- 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz
- Low gate current: 10 pA (max)
- Low input capacitance: 24 pF at VDS = 5 V
- High gate-to-drain and gate-to-source breakdown voltage: –40 V
- High transconductance: 68 mS
- Packages: Small SC70 and SOT-23
