LM113QML-SP Datasheet | Texas Instruments

FEATURES - 2 Low Breakdown Voltage: 1.220V - Dynamic Impedance of 0.3Ω from 500 μA to 20 m A - Temperature Stability Typically 1% over- 55°C to 125°C Range - Tight Tolerance: ±5% or ±1% - The characteristics of this reference remend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon- the energyband gap voltage- makes it useful for many temperature-pensation and temperature-measurement functions. DESCRIPTION The LM113 are temperature pensated, low voltage reference diodes. They feature extremelytight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of ponents in the IC; so they can be manufactured and supplied to tight tolerances. Connection Diagrams Figure 1. 2-Pin TO See NDU0002A Package N/C 1 N/C 2 N/C 3 N/C 4 V- 5 10 V+ 9 N/C 8 N/C 7 N/C 6 N/C Figure 2. 10-Pin CFP Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010- 2013, Texas Instruments Incorporated LM113QML, LM113QML-SP LM113QML is Obsolete SNVS367A - DECEMBER 2010 - REVISED APRIL 2013 Schematic Diagram .ti. These devices have limited built-in ESD...