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LM195QML - Ultra Reliable Power Transistors

General Description

The LM195 is a fast, monolithic power integrated circuit with complete overload protection.

Key Features

  • 1.
  • 2 Internal Thermal Limiting.
  • Greater Than 1.0A Output Current.
  • 3.0 μA Typical Base Current.
  • 500 ns Switching Time.
  • 2.0V Saturation.
  • Base Can be Driven up to 40V Without Damage.
  • Directly Interfaces with CMOS or TTL.
  • 100% Electrical Burn-in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LM195QML, LM195QML-SP www.ti.com SNLS194A – NOVEMBER 2010 – REVISED MARCH 2013 LM195QML Ultra Reliable Power Transistors FEATURES 1 •2 Internal Thermal Limiting • Greater Than 1.0A Output Current • 3.0 μA Typical Base Current • 500 ns Switching Time • 2.0V Saturation • Base Can be Driven up to 40V Without Damage • Directly Interfaces with CMOS or TTL • 100% Electrical Burn-in DESCRIPTION The LM195 is a fast, monolithic power integrated circuit with complete overload protection. This device, which acts as a high gain power transistor, has included on the chip, current limiting, power limiting, and thermal overload protection making it virtually impossible to destroy from any type of overload.