LM5109B-Q1
Features
- 1 Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results
- Device Temperature Grade 1
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C4A
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- 1-A Peak Output Current (1.0-A Sink/1.0-A Source)
- Independent TTL/CMOS patible Inputs
- Bootstrap Supply Voltage to 108-V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000-p F Load with 15-ns Rise and Fall Times
- Excellent Propagation Delay Matching (2 ns Typical)
- Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Thermally-Enhanced WSON-8 Package
3 Description
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS patible logic input...
